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庄伟东 Michael Zhuang 南京银茂微电子制造有限公司，总经理 General Manager, Nanjing SilverMicro Electronics |
| 个人简介 / Biography | |
| 庄伟东博士，1988年毕业于上海交通大学，获得材料科学学士学位。1996年毕业于美国麻省理工学院，获得冶金学博士学位，研究方向为半导体封装材料和工艺。曾长期任职于美国著名半导体公司，从事功率半导体器件的研发和应用。 于2007年创立南京银茂微电子制造有限公司，以研发、制造拥有自主知识产权的IGBT功率芯片和功率模块为主营业务。并在国内率先进行了全碳化硅功率模块的开发和应用。 |
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| 摘要 / Abstract | |
| Wide band gap (WBG) power devices such as silicon carbide (SiC) MOSFET, have drawn a lot of interest in EV applications. With the increase of wafer size and more penetration into industrial applications, SiC MOSFET power modules are expected to be more attractive for EV drive inverters. Since most of the EV drive inverters are operating at switching frequency less than 20kHz, the high frequency advantage of SiC MOSFET is not the main driving force here. Instead, more compact, light weight, higher operating temperature, higher efficiency are the driving forces for the future SiC MOSFET power modules used for EV drives. This paper explores the possible SiC MOSFET power module configuration for such applications. | |
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