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黄森 Sen Huang 中国科学院微电子研究所，研究员 Professor, Institute of Microelectronics of Chinese Academy of Sciences |
| 个人简介 / Biography | |
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黄森，博士，中国科学院微电子研究所研究员，2009年博士毕业于北京大学，2004年迄今一直致力于高性能GaN基功率半导体器件和产业化技术研发。迄今在IEEE EDL, APL等主流电子器件学术期刊发表SCI论文50余篇，IEDM论文6篇，SCI他引600余次，申请（授权）美国专利5项，中国专利14项。 Sen Huang received the Ph.D degree from Peking University, Beijing, China, in 2009. He is currently a Professor with the Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China. His research interest includes advanced design, fabrication and characterization technologies for III-V power semiconductor devices. |
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| 摘要 / Abstract | |
| AlGaN/GaN metal-insulator(oxide)-semiconductor HEMTs (MIS/MOS-HEMTs) with recessed gate, are especially attractive for power switching applications, owing to their large gate voltage swing and robust tolerance to gate overdrive. The research team from Institute of Microelectronics of Chinese Academy of Sciences has been dedicated to the key technologies in fabrication of GaN-based normally-OFF MIS/MOS-HEMTs for several years, among which high temperature low-damage gate recess and high breakdown E-field O3-source ALD-Al2O3 gate dielectric have been developed. In the very recently, a recess-free technology based on ultra-thin-barrier AlGaN/GaN Heterostructure and LPCVD-SiNx charge-modulated passivation, is proposed for manufacturing GaN-based power devices on large-size GaN-on-Si wafers. | |
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