|
| Power & Compound Semiconductor Forum |
 |
| Date: |
March 15-16, 2017 |
| Venue: |
Pudong Ballroom 4, Kerry Hotel Pudong, Shanghai |
 |
Chinese and English Simultaneous Interpretation will be provided |
|
|
|
 |
| Important Notice: This is a two-day conference. You can attend two-day conference when you choose any of them. |
From the first generation of semiconductors produced
on silicon wafers to the next generation of semiconductors produced on GaAs
wafers, the industry is now ramping up and investing in a third generation of semiconductors
based on SiC and GaN-based wafer technologies. These Wide Band Gap (WBG) materials
will have an increasing effect on society and technology for both power and
compound semiconductor device applications. These applications include
semiconductor lighting, laser, display, mobile communications, consumer
electronics, green energy, modern transportation, and others that will impact
and improve many aspects of society.
To meet the industry’s demand for critical insight and
information for these emerging trends, SEMI China has combined two previously
separate events, to create the comprehensive Power and Compound Semiconductor Forum. This forum, held in conjunction
with SEMICON China 2017, will have four sessions: LED & Optoelectronics,
Wide Band Gap Power Electronics, Compound Semiconductor in Communications, and
Emerging Power Device Technology. |
| |
|
|
|
|
|
|
| |
| Some Distinguished Speakers: |
 |
 |
 |
 |
 |
| Min Wang |
Tim Yeh |
Dr. Markus Behet |
LEBLANC Remy |
Edward Preisler |
| Lattice Power Corporation |
SANAN IC |
EpiGaN |
OMMIC |
Towerjazz |
|
| |
Day1-Mar.15, 2017
Session 1: LED & Optoelectronics( Previously known LED China Conference)
|
|
|
Session 2: Wide Band Gap Power Electronics
|
| Moderator: |
David Xiao
CEO of APT Electronics, Co-Chair of SEMI China LED Advisory Committee |
| 13:30-14:00 |
GaN on Si – a truly revolutionary semiconductor technology matures
Dr. Markus Behet
Chief Marketing Officer, EpiGaN |
|
14:00-14:30 |
Further advances in GaN and SiC epitaxial production technologies for efficient power semiconductor devices
Dr. Frank Wischmeyer
Vice President Power Electronics, AIXTRON SE |
| 14:30-15:00 |
Expectation for WBG power devices
Masakatsu Hoshi
Senior Engineer, Nissan Motor Co., Ltd |
| 15:00-15:30 |
The application of high density ICP etch equipment in new power devices manufacture
Yang Meng
Product Director and Deputy GM of Etch Product Division, Beijing NAURA Microelectronics Equipment Co., Ltd. |
| 15:30-16:00 |
Efforts towards GaN power FETs in Sinopower Semiconductor
Yang Liu
Vice president, SINOPOWER SEMICONDUCTOR CO.,LTD. |
| 16:00-16:30 |
Power & RF Electronics commercialization through MOCVD advancements from Single Wafer Reactor technology
Somit Joshi
Sr. Director of Marketing in Veeco |
| 16:30-17:00 |
GaN E-HEMT for the next era of power conversion
Charles Bailley
Senior Director, Asia, Sales, Mktg, & Apps, GaN Systems Inc. |
| |
|
|
Day2-Mar.16, 2017
Session 3: Compound Semiconductor in Communications |
| Moderator: |
Naiqian Zhang
President, Dynax Semicondutor, Inc.
|
| 09:25-09:30 |
Welcome Remark
Lung Chu
President of SEMI China |
| 09:30-09:55 |
High volume 6”GaN/SiC HEMT technology for wireless communication applications
Tim Yeh
Director, GaN TD Division, SANAN IC |
| 09:55-10:20 |
Development of high efficient and high reliable GaN RF Device for Mobile Application
Yi Pei
Director of Device Technology, Dynax Semiconductor |
| 10:20-10:45 |
Pure Play GaN HEMT 0.45/0.25-um Technology Development for Wireless Application
C.K. Lin
Director, WIN Semiconductors Corp. |
| 10:45-11:10 |
GaAs and GaN based device optimization by advanced epitaxial growth analysis
Tom Thieme
Director Marketing and Sales, LayTec AG |
| 11:10-11:35 |
SiGe BiCMOS Process Technologies for Wireless Applications
Edward Preisler
Towerjazz |
| 11:35-12:00 |
A Multipurpose Millimeter Wave High Power and Low Noise GaN/Si Process for High Frequency Transmit-Receive MMICs
LEBLANC Remy
Director, Product Development, OMMIC |
|
12:00-13:30 |
Break |
| 13:30-14:00 |
GaN and Related Materials for RF and Power Electronics Applications
Wayne Johnson
Vice President & Head of Power Business Unit, IQE |
| |
|
|
Session 4: Emerging Power Device Technology
|
| Moderator: |
Jiye Yang
Senior director, TD Integration Division I, HHGrace |
| 14:00-14:30 |
Device and packaging technologies for demanding high power applications
Arnost Kopta
Head of BiMOS R&D, ABB Switzerland Ltd, Semiconductors |
| 14:30-15:00 |
Status of Development and Mass Production for SiC Power Device
Hiroshi Kanazawa
Marketing Unit Manager, Showa Denko K.K. |
| 15:00-15:30 |
The Future of Power Devices and Implications for Semi Equipment
Durga Chaturvedula
Managing Director, 200mm Product Mgmt. & Technology, Applied Materials |
| 15:30-16:00 |
Demand, Status and Development Trend for Power Electronic Device
Yufeng Qiu
Vice president , Global Energy Interconnection Research Institute |
| 16:00-16:30 |
Thin Film Processes for Si, SiC and GaN Power Devices
Hans Auer
Senior Product Marketing Manager, Evatec |
| 16:30-17:00 |
Closing Keynote
Research of Power Semiconductor Devices with Novel Structures
Pengfei Wang
CTO, Oriental Semiconductor |
|
| |
| Two-day registration fee: |
|
Type
|
Before Feb.20 with Advanced Payment(Early Bird)
|
After Feb.20 and On-site
|
|
Attendees
|
RMB 1,000 per person
|
RMB 1,500 per person
|
|
Speakers
|
Free
|
Free
|
|
| *Lunch is not included |
| *Agenda is subject to change |
| |
| Developed from: |
 |
 |
|
| |
| More Details here. |
| |
| For sponsorships, market promotion opportunities, please contact: |
| Daniel Qi |
| Chief Analyst | Industry Research and Consulting |
| Director | Power and Compound Semiconductor Industry |
| Tel: 86-21-60278576 |
| Email: [email protected] |
|
| |
|
| |
|
感谢接收此邮件。如您想退订请点击此处。
Click here to
unsubscribe from this list only.
To unsubscribe from all SEMI email promotions, please email us at [email protected].
Copyright® 2017 SEMI. All rights reserved.
SEMI is headquartered at 673 South Milpitas Blvd. Milpitas, CA 95035, Tel:
1.408.943.6900, Fax: 1.408.428.9600, Web site: www.semi.org |
