| 时间 / Date: | 2018年10月24日 October 24th, 2018 |
| 地址 / Venue: | 南昌香格里拉大酒店一楼南昌厅(江西省南昌市红谷滩新区翠林路669号) |
| Nanchang Hall on the 1st floor of Nanchang Shangri-La Hotel | |
| (No. 669, Cui Lin Road, Honggutan District, Nanchang, Jiangxi, China) |
| 主办方 / Organizer： |  |
| 承办方 / Co-organizer: |  |
SEMI China will organize Compound Semiconductor Equipments and Manufacturing Technology Seminar in NanChang Shangri-La Hotel on Oct.24th, the latest technology trend of SiC Devices, GaN Power Electronics and MicroLED display will be discussed in seminar, as well as the solutions from key equipment suppliers for compound semiconductor industry.
请通过在线登记或在2018/10/19前反馈《参会回执》给Isadora Jin（金燕）[email protected] (TEL:021.6027.8578)完成会议登记。（注：注册登记对本次两个活动均有效）
Please register via Online Registration or reply RSVP to Isadora Jin ( [email protected] ) before 2018/10/19; ( Registration works for both events )
| 13:00 - 13:30 | 论坛注册 / Registration |
 |
主持人 / Moderator 王江波，SEMI中国HB-LED标准委员会联席主席，华灿光电（浙江）有限公司副总裁 Jiangbo Wang，SEMI China HB-LED Standards Technical Committee Co-chair, VP of HC SemiTek Corporation |
| 13:30 - 13:40 | 欢迎致辞 / Welcome Remark 南昌国家高新技术产业开发区管委会 The administrative committee of Nanchang National Hich-tech industrial development zone |
13:40 - 14:05 |
中国半导体设备供应商的机遇和崛起 China's Semiconductor Equipment Supplier's Opportunity and Rising Up 季华 Johnny Ji 南昌中微半导体设备公司及MOCVD中国事业部总经理 GM of Nanchang AMEC, GM of MOVCD China Business Management |
14:05 - 14:30 |
用于Micro LED 显示及高功率电子应用的硅基氮化镓技术 GaN-on-Si manufacturing for micro LED and High Power Electronics applications Burkhard Slischka CEO of Allos Semiconductors |
14:30 - 14:55 |
Mini/Micro LED 之技术发展与挑战 Technology Development and Challenges of Mini/Micro LED 武良文 Phil Wu 江西兆驰半导体有限公司总经理 GM of Jiang Xi Zhao Chi Semiconductor Co., LTD |
14:55 - 15:20 |
下一代碳化硅功率器件结构，制作工艺及发展趋势 Next Generation SiC Power Device Design, Fabrication Technology and Trends 倪炜江 WeiJiang Ni 北京世纪金光半导体有限公司副总工程师 Deputy Chief Engineer of Beijing Century Goldray Semiconductor Co. Ltd |
15:20 - 15:45 |
化合物半导体晶圆检测技术解析 Solutions for Compound Semi Bare Wafer Inspection Edwin Chew Manager of KLA Tencor Asia Regional Product Marketing |
15:45 - 16:10 |
用于8寸硅基氮化镓器件的MOCVD设备 Single Wafer MOCVD Tool for GaN Based Devices on 8-inch Si Wafer Yasushi Iyechika 日本NuFlare公司 NuFlare Technology, Inc. |
16:10 - 16:35 |
高密度ICP Etch 设备在化合物半导体器件制造中的应用 The Application of High Density ICP Etch Equipment in Compound Semiconductor Devices Manufacture 张轶铭 Yiming Zhang 北方华创研发经理 R&D Manager of Naura Technology Group Co., Ltd |
16:35 - 16: 50 |
硅衬底GaN在LED和功率器件上的应用 GaN LED and AlGaN/GaN HEMT on Silicon Substrate 涂逵 Tu Kui 晶能光电（江西）有限公司外延总监 EPI Director，Lattice Power(Jiangxi) Corporation |
SEMI HB-LED Standards China TC Chapter Meeting 2018
| Standards Name | Proposed Company | |
| • | Doc R5723C , New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers/HB-LED蓝宝石材料规范 | GHTOT / 贵州皓天 |
| • | Doc 5775D, New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers/高亮度LED衬底用单晶蓝宝石晶棒 | AURORA / 奥瑞德 |
| • | Doc 6192, New Standard: Specification for Dry Etching Patterned Sapphire Substrate (DPSS)/干法蚀刻图形化蓝宝石衬底规范 | JINGAN / 福建晶安 |
| • | Doc 6371, New Standard: Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate/图形化蓝宝石衬底上图形的几何参数测试方法 | BST / 博蓝特 |
| • | SEMI HB9-0818 Publish, New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED/HB-LED外延晶片表面缺陷检测方法 | HC SEMITEK / 华灿光电 |
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