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Dr. P.S. Raghavan Chief Technology Officer of GT Advanced Technology |
| 个人简介 / Biography | |
| Dr. P.S. Raghavan is GT Advanced Technologies’ Chief Technology Officer. Dr. Raghavan brings over 30 years of industrial and academic experience in crystal growth instrumentation, crystal growth of semiconducting (Silicon, III-V and II-VI) materials, Oxides (Al203, LiNbO3), NLO materials, scintillation detecting materials and advanced electronic and photonic devices. His decades of experience in developing technology and capital equipment has resulted in the successful commercialization of industry leading silicon, sapphire, silicon carbide and Gallium Nitride crystal growth furnaces for the solar, LED, and consumer and power electronics manufacturing industries. Prior to joining GT in 2002, he was involved in crystal growth research and held positions as Visiting Professor, Department of Electrical Engineering, NTHU, Hsinchu, Taiwan, Assistant Professor, Crystal Growth Centre, Anna University, and Reader and Head Instrumentation, Alagappa University, India. Dr. Raghavan holds a master’s degree in physics, a master of philosophy degree in physics and a Ph.D. in crystal growth of III-V compounds. He worked as postdoctoral fellow at internationally acclaimed laboratories worldwide and has 60 research publications in international journals, 8 patents and 100 publications in national/International conferences. He has co-authored 3 books on crystal growth and has earned several international awards for his contribution to the field of crystal growth technology. |
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In the case of Silicon Carbide, the solid phase coexists in equilibrium with its gaseous phase and hence it sublimes before it melts. As a result, since there is no stoichiometric SiC liquid phase, it is impossible to employ congruent melt growth and therefore it is not possible to grow SiC single crystals from melt, and instead crystal growth from the vapor phase is the preferable technique for growing SiC crystals at a commercial scale.
The Lely method was the first to grow SiC crystals of different polytypes of sufficient quality for electronic applications. The modified Lely method or physical vapor transport method (PVT) opened the way to industrialization of SiC and today SiC crystals of diameter up to 200 mm are grown using induction or resistance heated sublimation furnaces.
The need for further improvements of quality and control of growth led to additional advances of the PVT process as well as the exploration of other viable options. The principle of gaseous cracking for the supply of Si and C was further developed in order to achieve growth rates comparable to the PVT method for the production of high volume wafers. The technique developed is called high temperature chemical vapor deposition (HT-CVD). Further concepts were presented such as the Halide CVD (H-CVD), Modified PVT (M-PVT) and a combination of HT-CVD and PVT reactor called Continuous Feed PVT (CF-PVT). However, the latter techniques are far from producing commercial scale SiC wafers and are currently used at an academic level.
Lastly, in recent years, the growth of SiC bulk material from solution has gained interest from many researchers, as a potential method for producing large size, high quality SiC wafers, but is not a mature method capable of achieving commercialization status.
GT Advanced Technologies is a diversified technology company with crystalline growth expertise in silicon, silicon carbide and sapphire. The company’s advanced materials deliver sustained value to the world’s top manufacturers in the global PV, power electronics and photonics markets.
Leveraging its deep expertise in crystal growth technologies, GT Advanced Technologies has been involved in the development of commercial scale silicon carbide boule production to address the growing needs of the power electronics industry since the early 2000’s. The company’s extensive thermal modeling experience combined with equipment design has enabled unique production processes resulting in high quality boules with low crystalline defects and commercial run to run reproducibility.
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