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Date: April 19 09:00-16:30
Address: Quanzhou Hotel( No. 22, Zhuangfu Lane, Licheng District, 362000 Quanzhou, China)
    
Attention:
1. Online Registration is free by Apr.11; Registration fee -CNY 800 will be charged after Apr.11.
2. Effective SEMI members, SIIP China(SEMI Innovation Investment Platform) China members will be arranged in priority.
3：Concurrent Events: SEMI China HB-LED Standards TC Spring Meeting 2018；
4. About Registration:
    Registration is closed, thank you for your support.
    3). We will send registration confirmation letter on April 3, 8, 12, 16. If you haven't receivd our email, please feel free to contact us.
 
Organizer:
   
Co-organizer:
   
Diamond Sponsor:
   
Compared with silicon materials, GaS, InP, GaN and SiC as representatives for compounds semiconductor has excellent properties, such as optoelectric properties, high speed, high frequency, high power, high temperature and high radiation. It plays an increasingly extensive and core role in LED, 3D sensing (VCSEL), microwave communication, 5G communication, new energy, electric vehicle, high-speed rail, aerospace and other fields.
 
How to reach the efficiency improvement and cost reduction of compound semiconductor related new devices, and achieve super large scale manufacturing, the development of compound wafers is becoming one of the most important links in the industrial chain. SEMI China initiated China Semiconductor Wafer Technology Forum, which covers the latest technology trend of large size SiC, sapphire, GaN and GaAs wafer materials, and analyzes the material requirements on device processing and challenges facing by.
 
Agenda:
 
09:00-09:30 论坛注册
Registration
  
09:30-09:40 欢迎致辞
Welcome Remark
吕刚
福建省泉州市人民政府副市长
  
09:40-10:10 主旨演讲
Keynote Speech
RF-SOI: 助推5G移动互联
RF-SOI: Enabling 5G Connectivity
王庆宇 Jeffrey Wang
上海新傲科技股份有限公司总经理
CEO of Shanghai Simgui Technology Co., Ltd
  
10:10-10:40 坩埚下降法蓝宝石晶体生长技术及其在LED中的应用
Sapphire growth by vertical gradient freeze method and its applications in LEDs
王江波博士 Dr. Jiangbo Wang
华灿光电副总裁
VP of HC SEMITEK
  
10:40-11:10 碳化硅大尺寸晶圆及外延材料技术进展
SiC Substrate and Its Epitaxial Materials Technology
冯淦博士 Dr. Gan Feng
瀚天天成电子科技(厦门)有限公司总经理
General Manager of Epiworld International Co., LTD
  
11:10-11:40 化合物半导体-我国半导体产业的突破口
Compound Semiconductor-the Breakthough of Semiconductor Industry in China
朱邵歆博士 Dr. Shaoxin Zhu
中国电子信息产业发展研究院（赛迪研究院）集成电路研究所高级工程师
Senior Engineer of China Center for Information Industry Development IC Industry Research Institute
  
11:40-13:30 午餐
  
13:30-14:00 氮化镓衬底晶片的研究和产业化进展
Research and Industrial Development on GaN Substrate Wafer
徐科博士 Dr. Ke Xu
苏州纳维科技有限公司董事长
Chairman of Nanowin
  
14:00-14:30 碳化硅单晶衬底产业化进展
SiC Single Crystal Substrate Industrial Development
彭同华博士 Dr. Tonghua Peng
天科合达副总经理
Vice General Manager of TankeBlue Semiconductor
  
14:30-15:00 大尺寸碳化硅晶圆材料制造技术进展
Large Scale SiC Wafer Material Manufacturing Technology
张洁 Jack Zhang
福建北电新材料科技有限公司副总经理
Vice General Manager of Norstel
  
15:00-15:30 蓝宝石图形衬底形貌与缺陷检测方法
Introduction to the Inspection Methods of Pattern Shape and Defects of Patterned Sapphire substrate (PSS)
谢斌晖博士 Dr. Pinhui Hsieh
福建晶安光电有限公司总经理助理
Assistant General Manager of JINAN OPTOELECTRONICS
  
15:30-16:00 砷化镓及磷化铟晶圆技术介绍
GaAs and InP Substrate Wafer Technology
任殿胜博士 Dr. Diansheng Ren
北京通美晶体技术有限公司总监
Director of AXT, Inc.
  
16:00-16:30 宽禁带半导体材料的晶体生长技术
Crystal Growth of Wideband Gap Semiconducting Materials
Dr.P.S.Raghavan
Chief Technology Officer of GT Advanced Technology
  
17:30-20:00 产业招待晚宴
Industry Reception Dinner
  
Agenda is subject to change 议程变化恕不另行通知
 
More speech opportunities please contact
戚发鑫 / Daniel Qi 黄晓依 / Sophia Huang
Tel: 021-6027.8576 Tel: 021.6027.8553
Email: [email protected] Email: [email protected]
 

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